99.5% Titanium–Copper Conductive Wear-Resistant Sputtering Target (Ti-Cu) product detail at Eata Ray
99.5% Titanium–Copper Conductive Wear-Resistant Sputtering Target (Ti-Cu)
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99.5% Titanium–Copper Conductive Wear-Resistant Sputtering Target (Ti-Cu)

Cat No:HPATBA-0010

Description

A nanostructured Ti-Cu sputtering target produced by mechanical alloying and spark-plasma sintering. Its metastable beta/Ti2Cu structure is specified for combined hardness, electrical conductivity, antibacterial response, and thermal-management performance.

Basic Information

Chemical Composition Cu 5–40 wt.%; balance Ti
Electrical Conductivity (%IACS or MS/m) ≥35% IACS; stated adjustable range 30–50% IACS
Thermal Conductivity (W/(m·K)) 25–80
Coefficient of Thermal Expansion (×10⁻⁶/K) 7–10
Molecular Formula Ti-Cu
Purity/Assay 99.5%
Form Alloy sputtering target
Impurities C <150 ppm; Fe <100 ppm
Processing Conditions Mechanical alloying and spark-plasma sintering (SPS)
Oxygen Content (ppm) <400
Relative Density (%) >99.3
Grain Size Titanium-matrix grains ≤3 μm
Phase Composition Metastable beta phase and Ti2Cu phase; combined fraction >85%
Nanohardness (GPa) >8; stated range 8–12 for deposited films
Electromigration Lifetime (h) >1000 at 5×10⁴ A/cm²
RF Loss Tangent ≤0.002 at 28 GHz
Thermal Shock Cycles >5000 at ΔT = 200 °C
Interface Diffusion Zone (μm) <0.01 after 1000 h
Precipitate Size (nm) Ti2Cu: 20–100
Phase Interface Bond Strength (MPa) >150
Electrical Contact Life (cycles) >1×10⁶
Bacterial Reduction (%) >99.99 after 3 h against E. coli
Collagen Deposition Increase (%) 280
Friction Coefficient <0.1 in the stated physiological environment
Thermal Resistance (K·m²/W) <1×10⁻4
Contact Resistance (mΩ·cm²) <3

Applications

Applications Advanced semiconductor packaging and through-silicon vias; antibacterial orthopedic and surgical-device coatings; fuel-cell bipolar plates; thermoelectric interface layers; 5G thermal substrates; IGBT bonding layers

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