| Product Form | Sputtering target |
| Chemical Formula | ZnO-Ga2O3 |
| Purity | 99.99% |
| Surface Roughness | <0.3 nm RMS after deposition |
| Key Properties | Ga3+ site occupancy above 98%; controllable oxygen-vacancy concentration of 10^16-10^20 cm^-3; average visible-light transmittance above 95% at 550 nm; piezoelectric coefficient d33 at least 12 pC/N; resistance change below 3% after 1000 hours at 85°C/85% RH; proton-radiation tolerance above 10^15 p/cm²; flexible-electrode sheet resistance up to 5 Ω/sq; sputter-damage depth below 2 nm; sheet-resistance uniformity within ±1.5% across 6 inches. |
| Carrier Mobility | >65 cm²/V·s |
| Applications | Foldable-display transparent electrodes, micro-LED bonding layers, piezo-photocatalytic water-splitting films, perovskite-solar-cell transport layers, radiation-resistant sensors, deep-space transparent antennas, tactile artificial-skin arrays and optical stimulation layers. |
Eata Energy delivers high-performance energy materials, application-focused customization, and reliable global supply solutions—empowering innovation across energy storage, photovoltaics, semiconductors, and advanced optoelectronics.
For Research or Industrial Raw Materials, Not For Personal Medical Use!
|
There is no product in your cart. |