High-Purity Copper Thin-Film Disk

Cat No:HPM-HCO-0005

Description

A precision copper disk designed for use as a thin-film substrate, deposition source, or conductive test specimen.

Datasheet

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Basic Information

Form	Thin-film disk
Purity	99.99% (4N)
EC Number	231-159-6
MDL Number	MFCD00010965
PubChem Substance ID	23978
NACRES	NA.23
UNSPSC Code	12141711
Chemical Formula	Cu
SMILES String	[Cu]
InChI	InChI=1S/Cu
InChI key	RYGMFSIKBFXOCR-UHFFFAOYSA-N
Atomic Number	29
Atomic Weight	63.546 g/mol
Valences Shown	+1, +2
Crystal Structure	Face-centered cubic
Magnetic Order	Diamagnetic
Electronic Structure	[Ar] 3d10 4s1
Material Condition	Hard, soft
Density	8.96 g/cm³ at 20 °C
Melting Point	1084.62°C
Boiling Point	2562°C
Electrical Conductivity	5.96 × 10⁷ S/m at 20 °C
Electrical Resistivity	1.68 µΩ·cm at 20 °C
Temperature Coefficient of Resistivity	0.0043/K@0-100°C
Thermal EMF Against Pt (cold 0°C - hot 100°C)	0.76 mV
Young’s Modulus	129.8 GPa
Bulk Modulus	137.8 GPa
Poisson’s Ratio	0.343
Tensile Strength	224~314 MPa
Yield Strength	54~270 MPa
Izod Toughness	68 J/m
Vickers Hardness (kgf mm⁻² )	87
Thermal Conductivity (W·m⁻¹·K⁻¹)	401@0-100°C
Coefficient of Thermal Expansion (×10⁻⁶ K⁻¹)	17@0-100°C
Specific Heat Capacity (J·kg⁻¹·K⁻¹)	385@25°C
Latent Heat of Fusion (J/g)	205
Latent Heat of Evaporation (J/g)	4796
Natural Isotope Distribution (Mass No./%)	65/ 30.8, 63/ 69.2
Atomic Radius - Goldschmidt (nm )	0.128
Ionisation Potential (No./eV)	7.73, 20.29, 36.8, 55.2, 79.9, 103
Thermal Neutron Absorption Cross-Section (barns)	3.8
Photoelectric Work Function (eV)	4.5
Packaging Requirements	Packaged in aluminum-plastic composite bags and stored in a dry environment.

Applications

Thin-film research; microelectronic interconnect studies; optical coatings; surface analysis; deposition trials.

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For Research or Industrial Raw Materials, Not For Personal Medical Use!